The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Dec. 31, 2020
Rohm Co., Ltd., Kyoto, JP;
Tatsuya Yanagi, Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
Hiroyuki Sakairi, Kyoto, JP;
Naotaka Kuroda, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor Mincludes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor Min a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor Mbased on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.