The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Nov. 01, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hajime Sasaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/20058 (2018.01); G01N 23/2251 (2018.01); H01J 37/295 (2006.01);
U.S. Cl.
CPC ...
G01N 23/20058 (2013.01); G01N 23/2251 (2013.01); H01J 37/295 (2013.01); G01N 2223/418 (2013.01);
Abstract
A sample () is created by cutting out a device on a plane (10-10). The device has a gate electrode () formed along a direction [2-1-10] on a plane c (0001) of a compound semiconductor () having a wurtzite structure. Edge dislocations having Burgers vectors of 1/3[2-1-10] and 1/3[−2110] and mixed dislocations having Burgers vectors of 1/3[2-1-13] and 1/3[−2113] are observed by making an electron beam () incident on the sample () from a direction [−1010] using a transmission electron microscope.