The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
May. 03, 2021
Guangdong Fenghua Advanced Technology Holding Co., Ltd., Guangdong, CN;
Zhenxiao Fu, Guangdong, CN;
Jianmei Liu, Australian Capital Territory, AU;
Haidong Ren, Guangdong, CN;
Yun Liu, Australian Capital Territory, AU;
Terry James Frankcombe, Australian Capital Territory, AU;
Xiuhua Cao, Guangdong, CN;
Shiwo Ta, Guangdong, CN;
GUANGDONG FENGHUA ADVANCED TECHNOLOGY HOLDING CO., LTD., Zhaoqing, CN;
Abstract
Disclosed herein is a doped perovskite barium stannate material, which has a chemical general formula of BaABSnO, where A is at least one of In, Y, Bi and La; B is at least one of Nb and Ta, and 0<x≤0.025. The doped perovskite barium stannate material disclosed in the invention has a high dielectric constant, low dielectric loss and good temperature-stability, and it can be used not only as low-frequency ceramic capacitor dielectrics, but also as microwave dielectric ceramics because of its excellent microwave dielectric properties, implying the potential application in the field of microwave communication. What's more, disclosed is a method to prepare the doped perovskite barium stannate material and the application of the doped perovskite barium stannate material in a low-frequency ceramic capacitor or microwave communication dielectric ceramics.