The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
May. 05, 2023
Applicants:
The Regents of the University of California, Oakland, CA (US);
Bar-ilan University, Ramat Gan, IL;
Inventors:
Kristie Koski, Davis, CA (US);
Doron Naveh, Petah-Tikva, IL;
Chen Stern, Kiryat Ono, IL;
Avraham Twitto, Jerusalem, IL;
Assignees:
The Regents of the University of California, Oakland, CA (US);
BAR-ILAN UNIVERSITY, Ramat Gan, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 39/06 (2006.01); G01J 5/10 (2006.01); G01J 5/00 (2022.01);
U.S. Cl.
CPC ...
C01G 39/06 (2013.01); G01J 5/10 (2013.01); C01P 2002/54 (2013.01); C01P 2002/77 (2013.01); C01P 2002/78 (2013.01); C01P 2002/82 (2013.01); C01P 2002/85 (2013.01); C01P 2002/88 (2013.01); C01P 2004/04 (2013.01); C01P 2006/40 (2013.01); G01J 2005/0077 (2013.01);
Abstract
The present disclosure relates to layered 2D MoSnanostructures wherein light-matter interactions are enhanced by intercalation with transition metal atoms and/or post-transition metal atoms, specifically Cu and/or Sn. Photodetectors comprising Cu and/or Sn intercalated 2D MoSnanostructures amplify the response in the near-infrared for devices based on 2D MoS.