The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

May. 13, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yeoung Keol Woo, Seongnam-si, KR;

Yung Bin Chung, Yongin-si, KR;

Chul Min Bae, Hwaseong-si, KR;

Ji Hye Han, Seoul, KR;

Eun Jin Kwak, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 77/10 (2023.01); H10K 59/12 (2023.01); H10K 59/126 (2023.01); H10K 71/00 (2023.01); H10K 71/80 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 77/111 (2023.02); H10K 59/126 (2023.02); H10K 71/00 (2023.02); H10K 71/80 (2023.02); H10K 59/1201 (2023.02); H10K 2102/00 (2023.02); H10K 2102/311 (2023.02); H10K 2102/351 (2023.02);
Abstract

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.


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