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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12035528 B1

PDFFull Text
Date of Patent:
Jul. 09, 2024

Filed:

Aug. 05, 2021

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Jun Shin, Yongin-si, KR;

Hyun Mog Park, Seoul, KR;

Joong Shik Shin, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Allison Bernstein

Assistant Examiner:

Margaret B Hayes

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/3213 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 29/41775 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02);
Abstract

A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.

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