The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Mar. 11, 2021
Applicant:

Asahi Kasei Microdevices Corporation, Tokyo, JP;

Inventor:

Kengo Sasayama, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); G01N 21/3504 (2014.01); H01L 33/30 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); G01N 21/3504 (2013.01); H01L 33/30 (2013.01);
Abstract

Provided are a semiconductor wafer, a semiconductor device, and a gas concentration measuring device having a size reduced by reducing warpage to be even smaller than the sizes that can be achieved by conventional techniques. The semiconductor wafer includes: a wafer substrate, a semiconductor stacked portion formed on a first surface of the wafer substrate, the semiconductor stacked portion being capable of emitting or receiving infrared light of 2 μm to 10 μm; and an optical filter formed on a second surface of the wafer substrate that is opposite to the first surface of the wafer substrate. The thickness T[μm] of the wafer substrate and the thickness T[μm] of the optical filter satisfy the relations of T≥4 and T≤0.000053×T.


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