The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Sep. 26, 2019
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Andreas Leber, Regensburg, DE;

Siegfried Herrmann, Neukirchen, DE;

Christine Rafael, Donaustauf, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/387 (2013.01); H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.


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