The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Apr. 07, 2020
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Masahiro Nada, Musashino, JP;
Toshihide Yoshimatsu, Musashino, JP;
Fumito Nakajima, Musashino, JP;
Yuki Yamada, Musashino, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
Provided is a semiconductor light receiving element which can achieve a high-speed operation without sacrificing light receiving sensitivity while increasing the margin of a manufacturing process. The semiconductor light receiving element according to the present invention is characterized by comprising: a semiconductor layer doped with a first impurity; a semiconductor light absorption layer in which a band gap energy is adjusted to absorb incident light on the semiconductor layer doped with the first impurity; a semiconductor layer on the semiconductor light absorption layer and doped with a second impurity; and a metal electrode contacting side surfaces of the semiconductor layer doped with the second impurity, wherein side surfaces of the metal electrode are surfaces parallel to a growth direction of the semiconductor layer doped with the second impurity.