The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Feb. 10, 2023
Applicant:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Inventors:
Toshiro Sakamoto, Tokyo, JP;
Satoshi Takehara, Tokyo, JP;
Yoshiro Yamaha, Tokyo, JP;
Makoto Kobayashi, Tokyo, JP;
Assignee:
ASAHI KASEI MICRODEVICES CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H10B 41/30 (2023.02);
Abstract
A nonvolatile storage element includes a substrate; a gate region having a charge holding region and an insulator surrounding an entire surface of the charge holding region; a drain region formed in one of both sides of a lower portion of the gate region; and a source region formed in another one of both the sides. A halogen is distributed in the insulator to cover an entire surface of an upper surface of the charge holding region.