The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Nov. 01, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 21/283 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/225 (2013.01); H01L 21/283 (2013.01); H01L 21/324 (2013.01); H01L 21/823487 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/408 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66734 (2013.01); H01L 29/7809 (2013.01); H01L 29/42368 (2013.01); H01L 29/4238 (2013.01);
Abstract
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.