The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Jun. 15, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Masahiko Kuraguchi, Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
The nitride-based semiconductor device includes a carrier traveling layercomposed of non-doped AlGaN (0≤X<1); a barrier layerformed on the carrier traveling layerand composed of non-doped or n-type AlGaN (0<Y≤1, X<Y) having a lattice constant smaller than that of the carrier traveling layer; a threshold voltage control layerformed on the barrier layerand composed of a non-doped semiconductor having a lattice constant equal to that of the carrier traveling layer; and a carrier inducing layerformed on the threshold voltage control layerand composed of a non-doped or n-type semiconductor having a lattice constant smaller than that of the carrier traveling layer. The nitride-based semiconductor device further includes a gate electrodeformed in a recess structure, a source electrodeand a drain electrode