The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Aug. 20, 2021
Omnivision Technologies, Inc., Santa Clara, CA (US);
Hui Zang, San Jose, CA (US);
OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);
Abstract
A method for forming a contact pad of a semiconductor device is disclosed. The method includes providing a semiconductor substrate including a first side and a second side. The semiconductor device includes a shallow trench isolation structure, disposed between the first side and the second side, and an intermetal dielectric stack coupled to the second side. The intermetal dielectric stack includes a first metal interconnect. The method further includes etching a first trench into the semiconductor substrate, depositing a dielectric material into the first trench to form a dielectric spacer extending along side walls of the first trench, etching a second trench aligned with the first trench, and depositing a metal material into the second trench to form the contact pad that contacts the first metal interconnect.