The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Sep. 28, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Jungkyu Chae, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01);
Abstract

A standard cell comprises a first active region and a first power rail, the first active region and the first power rail disposed in a first MOS region; a second active region and a second power rail, the second active region and the second power rail disposed in a second MOS region; and a gate electrode extending to cross the first and second active regions and the first and second power rails in a first direction, wherein the first power rail is disposed closer to a boundary between the first MOS region and the second MOS region than to a first side of the first MOS region opposite the boundary, and wherein the second power rail is disposed closer to the boundary between the first MOS region and the second MOS region than to a first side of the second MOS region opposite the boundary.


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