The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Aug. 25, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tyler Sherwood, Fonda, NY (US);

Joseph F. Salfelder, Pleasant Valley, NY (US);

Ki Cheol Ahn, Watervliet, NY (US);

Kai Ma, Palo Alto, CA (US);

Raghav Sreenivasan, Fremont, CA (US);

Jason Appell, Malta, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 24/05 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/29186 (2013.01);
Abstract

Methods of semiconductor processing may include contacting a substrate with a first slurry and a first platen. The substrate may include silicon oxide defining one or more features, a liner extending across the silicon oxide and within the one or more features, and a copper-containing layer deposited on the liner and extending within the one or more features. The first slurry and the first platen may remove a first portion of the copper-containing layer. The methods may include contacting the substrate with a second slurry and a second platen, which may remove at least a portion of the liner. The methods may include contacting the substrate with a third slurry and a third platen, which may remove a second portion of the copper-containing layer. The methods may include contacting the substrate with a fourth slurry and a fourth platen, which may remove at least a portion of the silicon oxide.


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