The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
May. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jang Hoon Kim, Seoul, KR;
Soo Kyung Kim, Seongnam-si, KR;
Tae-Kyu Kim, Hwaseong-si, KR;
Young Kuk Byun, Suwon-si, KR;
Woo Jin Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.