The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Oct. 15, 2020
Applicant:
United States Department of Energy, Washington, DC (US);
Inventors:
Mengjia Gaowei, Stony Brook, NY (US);
John Smedley, White Rock, NM (US);
John Walsh, Upton, NY (US);
Jiajie Cen, San Jose, CA (US);
John Jay Sinsheimer, Centereach, NY (US);
Assignee:
U.S. Department of Energy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/12 (2006.01); C01B 19/00 (2006.01); C23C 14/06 (2006.01); C23C 14/24 (2006.01); C23C 14/52 (2006.01);
U.S. Cl.
CPC ...
H01J 9/12 (2013.01); C01B 19/007 (2013.01); C23C 14/06 (2013.01); C23C 14/24 (2013.01); C23C 14/52 (2013.01);
Abstract
One or more embodiments relates to a system and method for growing ultrasmooth and high quantum efficiency photocathodes. The method includes exposing a substrate of Si wafer to an alkali source; controlling co-evaporating growth and co-deposition forming a growth including Te; and monitoring a stoichiometry of the growth, forming the photocathodes.