The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Mar. 21, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Steven Wells, Rancho Cordova, CA (US);

Mark Carlson, Longmont, CO (US);

Amit Jain, Cupertino, CA (US);

Narasimhulu Dharani Kotte, Fremont, CA (US);

Senthil Thangaraj, Fremont, CA (US);

Barada Mishra, Sunnyvale, CA (US);

Girish Desai, Cupertino, CA (US);

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1008 (2013.01); G06F 3/061 (2013.01); G06F 3/0611 (2013.01); G06F 3/0644 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 11/1048 (2013.01);
Abstract

In one embodiment, a solid state drive (SSD) comprises a plurality of non-volatile memory dies communicatively arranged in one or more communication channels, each of the plurality of non-volatile memory dies comprising a plurality of physical blocks, one or more channel controllers communicatively coupled to the one or more communication channels, respectively, and a memory controller communicatively coupled to the plurality of non-volatile memory dies via the one or more channel controllers, wherein the memory controller is configured to assign (i) the plurality of physical blocks of a first die of the plurality of non-volatile memory dies to only a first region and (ii) the plurality of physical blocks of a second die of the plurality of non-volatile memory dies to only a second region, perform only read operations on the first region in a first operation mode, and perform write operations or maintenance operations on the second region in a second operation mode concurrently with read operations on the first region in the first operation mode.


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