The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Apr. 09, 2019
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventors:

Yuki Yamada, Tokyo, JP;

Masahiro Nada, Tokyo, JP;

Fumito Nakajima, Tokyo, JP;

Hideaki Matsuzaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/04 (2006.01); G01R 1/067 (2006.01); G01R 1/073 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
G01N 27/04 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 22/34 (2013.01); H01L 23/5226 (2013.01);
Abstract

A structure includes an insulating layer on a semiconductor substrate, and a first through-hole and a second through-hole formed in the insulating layer. The second through-hole is formed in the insulating layer at a set distance from the first through-hole. The structure also includes a first electrode portion and a second electrode portion. The first electrode portion is formed by filling the first through-hole. The first electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the first through-hole. The second electrode portion is formed by filling the second through-hole. The second electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the second through-hole.


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