The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Oct. 19, 2021
Applicant:

Silicon Laboratories Inc., Austin, TX (US);

Inventors:

Peh Sheng Jue, Singapore, SG;

Jeffrey L. Sonntag, Weaverville, NC (US);

Assignee:

Silicon Laboratories Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); H03H 7/06 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
G01K 7/00 (2013.01); H03H 7/06 (2013.01); H03F 3/45475 (2013.01);
Abstract

A temperature sensor that is insensitive to process variation and mismatch is disclosed. The temperature sensor includes a PTAT voltage generator, a sampling and gain boosting circuit, a filter and a controller. The PTAT voltage generator utilizes a plurality of current sources, each of which is in electrical communication with the same diode, or diode stack. The output of the PTAT voltage generator is sampled and amplified with the sampling and gain boosting circuit. The output of the sampling and gain boosting circuit is then filtered using a low pass filter. The selection of the current mirrors, the sampling timing and other signals are provided by the controller. In some simulations, the output from the temperature sensor was accurate to within 1.5° C., using a one temperature calibration process.


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