The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Jun. 03, 2022
Applicant:
Enf Technology Co., Ltd., Yongin-si, KR;
Inventors:
Hyeon Woo Park, Yongin-si, KR;
Seok Hyeon Nam, Yongin-si, KR;
Myung Ho Lee, Yongin-si, KR;
Myung Geun Song, Yongin-si, KR;
Assignee:
ENF TECHNOLOGY CO., LTD., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/10 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); C23F 1/00 (2006.01); C23F 1/14 (2006.01); C23F 1/16 (2006.01); C23F 1/44 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/10 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); C23F 1/00 (2013.01); C23F 1/14 (2013.01); C23F 1/16 (2013.01); C23F 1/44 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01);
Abstract
The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.