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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12031077 B1

PDFFull Text
Date of Patent:
Jul. 09, 2024

Filed:

Jun. 03, 2022

Etching composition for metal nitride layer and etching method using the same

Applicant:

Enf Technology Co., Ltd., Yongin-si, KR;

Inventors:

Hyeon Woo Park, Yongin-si, KR;

Seok Hyeon Nam, Yongin-si, KR;

Myung Ho Lee, Yongin-si, KR;

Myung Geun Song, Yongin-si, KR;

Assignee:

ENF TECHNOLOGY CO., LTD., Yongin-si, KR;

Attorney:

McCoy Russell LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
C09K 13/10 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); C23F 1/00 (2006.01); C23F 1/14 (2006.01); C23F 1/16 (2006.01); C23F 1/44 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/10 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); C23F 1/00 (2013.01); C23F 1/14 (2013.01); C23F 1/16 (2013.01); C23F 1/44 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01);
Abstract

The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

Find Patent Forward Citations

Park, Hyeon. (2024). Etching composition for metal nitride layer and etching method using the same (U.S. Patent No. 12031077). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12031077

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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