The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Mar. 12, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jooyeon Ahn, Suwon-si, KR;

Hyeyeon Yang, Suwon-si, KR;

Tae Gon Kim, Hwaseong-si, KR;

Jongmin Lee, Hwaseong-si, KR;

Shin Ae Jun, Seongnam-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); C08J 5/18 (2006.01); C09K 11/06 (2006.01); C09K 11/54 (2006.01); C09K 11/56 (2006.01); C09K 11/62 (2006.01); C09K 11/70 (2006.01); H01L 51/00 (2006.01); H10K 50/115 (2023.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/565 (2013.01); C08J 5/18 (2013.01); C09K 11/06 (2013.01); C09K 11/54 (2013.01); C09K 11/62 (2013.01); C09K 11/70 (2013.01); H10K 50/115 (2023.02); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C08J 2300/12 (2013.01);
Abstract

A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.


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