The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Mar. 24, 2021
Applicant:

Eugenus, Inc., San Jose, CA (US);

Inventors:

Sang Young Lee, San Jose, CA (US);

Sung-Hoon Jung, Santa Clara, CA (US);

Jerry Mack, San Jose, CA (US);

Niloy Mukherjee, San Ramon, CA (US);

Assignee:

Eugenus, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/882 (2023.02); H10B 63/84 (2023.02); H10N 70/041 (2023.02); H10N 70/231 (2023.02); H10B 63/24 (2023.02);
Abstract

The disclosed technology generally relates to semiconductor devices, and more particularly to an encapsulation layer for a semiconductor device having a chalcogenide material, and methods of forming the same. In one aspect, a method of fabricating a semiconductor device comprises providing a substrate having an exposed surface comprising a chalcogenide material. The method additionally comprises forming a low-electronegativity (low-χ) metal oxide layer on the chalcogenide material by cyclically exposing the substrate to a low-χ metal precursor and an oxygen precursor comprising O, wherein the low-χ metal of the metal precursor has an electronegativity of 1.6 or lower.


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