The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Mar. 15, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Shogo Itai, Kawasaki Kanagawa, JP;

Tadaomi Daibou, Yokkaichi Mie, JP;

Yuichi Ito, Yokkaichi Mie, JP;

Katsuyoshi Komatsu, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H10B 61/10 (2023.02); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H10N 50/10 (2023.02);
Abstract

According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.


Find Patent Forward Citations

Loading…