The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Aug. 16, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sanghwan Park, Suwon-si, KR;

Younghyun Kim, Seoul, KR;

Jaehoon Kim, Seoul, KR;

Heeju Shin, Seoul, KR;

Sechung Oh, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A semiconductor device including a substrate; a lower electrode on the substrate; a magnetic tunnel junction structure on the lower electrode, the magnetic tunnel junction structure including a pinned layer, a tunnel barrier layer, and a free layer which are sequentially stacked; an upper electrode on the magnetic tunnel junction structure; and an oxidation control layer between the free layer and the upper electrode, the oxidation control layer including at least one filter layer and at least one oxide layer, wherein the at least one filter layer includes MoCoFe.


Find Patent Forward Citations

Loading…