The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Apr. 14, 2023
Applicant:
Samsung Electronics Co., Ltd.;
Inventors:
Amitoj Singh, Sunnyvale, CA (US);
Tienyu Chang, Sunnyvale, CA (US);
Siu-Chuang Ivan Lu, San Jose, CA (US);
Assignee:
Samsung Electronics Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/56 (2006.01); H03F 3/24 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
H03K 17/56 (2013.01); H03F 3/245 (2013.01); H04B 1/04 (2013.01); H03F 2200/451 (2013.01); H03K 2217/0036 (2013.01);
Abstract
A shunt switch. In some embodiments, the shunt switch includes a transistor stack including a first transistor and a capacitor. The transistor stack may have a first end terminal and a second end terminal, the first transistor being connected to the first end terminal, the first end terminal being connected to a switching terminal of the shunt switch. The capacitor may have a first terminal connected to the second end terminal of the transistor stack, and a second terminal connected to a low-impedance node.