The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Oct. 02, 2019
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Ivar Tangring, Regensburg, DE;

Korbinian Perzlmaier, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

An optoelectronic semiconductor chip may have or include an x-doped region, a y-doped region, an active region arranged between the x-doped region and the y-doped region, and an x-contact region. The x-contact region may be arranged to the side of the x-doped region facing away from the active region. The x-contact region may include at least one first region and at least one second region. The x-contact region may be designed such that, during operation of the optoelectronic semiconductor chip, more charge carriers are injected into the x-doped region via the second region than via the first region.


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