The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Mar. 28, 2023
Applicant:

Ireach Corporation, Hsinchu, TW;

Inventors:

Tzu-Chieh Hsu, Hsinchu, TW;

Yi-Wen Huang, Hsinchu, TW;

Shou-Lung Chen, Hsinchu, TW;

Hsin-Kang Chen, Hsinchu, TW;

Assignee:

IREACH CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01S 5/02 (2006.01); H01S 5/04 (2006.01); H01S 5/042 (2006.01); H01S 5/42 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01S 5/0216 (2013.01); H01S 5/0425 (2013.01); H01S 5/04254 (2019.08); H01S 5/04256 (2019.08); H01S 5/423 (2013.01); H01S 5/0217 (2013.01); H01S 5/04257 (2019.08); H01S 5/18305 (2013.01); H01S 5/18311 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.


Find Patent Forward Citations

Loading…