The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Mar. 03, 2023
Applicants:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Jinko Solar Co., Ltd., Jiangxi, CN;

Inventors:

Jingsheng Jin, Zhejiang, CN;

Guangming Liao, Zhejiang, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/077 (2012.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/048 (2014.01); H01L 31/05 (2014.01);
U.S. Cl.
CPC ...
H01L 31/077 (2013.01); H01L 31/02008 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/028 (2013.01); H01L 31/048 (2013.01); H01L 31/0512 (2013.01);
Abstract

A solar cell and a photovoltaic module. The solar cell includes: a substrate including a first surface; a tunneling oxide layer covering the first surface; a doped conductive layer covering a surface of the tunneling oxide layer away from the substrate; an intrinsic polycrystalline silicon layer formed on one side of the doped conductive layer away from the tunneling oxide layer; and a plurality of first electrodes arranged on one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer and electrically connected to the doped conductive layer. At least a portion of the first electrode is located in the intrinsic polycrystalline silicon layer, and a gap is defined between a top end of the first electrode and the substrate.


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