The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jan. 08, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, a pair of S/D electrodes, and a gate electrode. The first nitride-based semiconductor layer is disposed over the buffer and forms a first interface with the buffer. The shield layer includes a first isolation compound and is interposed between the buffer and the first nitride-based semiconductor layer. The first isolation compound has a bandgap greater than a bandgap of the buffer and greater than a bandgap of the first nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.