The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jan. 25, 2018
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Seigo Mori, Kyoto, JP;
Masatoshi Aketa, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 29/16 (2006.01); H01L 29/32 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H02M 7/00 (2006.01); H02M 7/5387 (2007.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/0223 (2013.01); H01L 21/02529 (2013.01); H01L 21/046 (2013.01); H01L 21/0485 (2013.01); H01L 21/049 (2013.01); H01L 23/3121 (2013.01); H01L 23/49562 (2013.01); H01L 24/48 (2013.01); H01L 29/0657 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/417 (2013.01); H01L 29/4236 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01); H02M 7/003 (2013.01); H02M 7/5387 (2013.01); H01L 21/02255 (2013.01); H01L 2224/48177 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13091 (2013.01); H02P 27/06 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type having a main surface, a diode region of the first conductivity type formed in a surface layer portion of the main surface of the semiconductor layer, a carrier trapping region including crystal defects and formed along a peripheral edge of the diode region in the surface layer portion of the main surface of the semiconductor layer, and an anode electrode formed on the main surface of the semiconductor layer and forming a Schottky junction with the diode region.