The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Mar. 13, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Shinichi Miyake, Kanagawa, JP;

Hirofumi Yamashita, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1465 (2013.01); H01L 27/14605 (2013.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01); H01L 27/14641 (2013.01); H04N 25/75 (2023.01);
Abstract

An imaging element according to an embodiment of the present disclosure includes a first semiconductor substrate, and a second semiconductor substrate stacked over the first semiconductor substrate with an insulating layer interposed therebetween. The first semiconductor substrate includes a photoelectric conversion section, and a charge-holding section that holds charges transferred from the photoelectric conversion section. The second semiconductor substrate includes an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section. The amplification transistor includes a channel region, a source region, and a drain region in a plane intersecting a front surface of the second semiconductor substrate, and includes a gate electrode being opposed to the channel region with a gate insulating film interposed therebetween and being electrically coupled to the charge-holding section.


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