The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jul. 23, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong Mo Im, Seoul, KR;

Ja Meyung Kim, Seoul, KR;

Jong Eun Park, Suwon-si, KR;

Beom Suk Lee, Seoul, KR;

Kwan Sik Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14831 (2013.01);
Abstract

An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.


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