The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
May. 21, 2020
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;
Inventor:
Xiaobo Hu, Guangdong, CN;
Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/28562 (2013.01); H01L 21/76849 (2013.01); H01L 21/76864 (2013.01); H01L 23/15 (2013.01);
Abstract
A method and a structure for determining a blocking ability of a copper diffusion blocking layer are disclosed. The method includes: a step Sof forming an a-Si semiconductor layer, the copper diffusion blocking layer, and a copper electrode layer on a glass substrate; a step Sof forming a transparent electrode layer on the glass substrate; a step Sof performing a high temperature deterioration process to the glass substrate; and a step Sof observing a degree of forming the black copper-silicon alloy layer on a surface of a composite film layer sample of the glass substrate.