The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Aug. 22, 2021
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Yang Du, Hsinchu, TW;

Yung-Fong Lin, Taoyuan, TW;

Tsung-Hsiang Lin, New Taipei, TW;

Yu-Chieh Chou, New Taipei, TW;

Cheng-Tao Chou, Yunlin County, TW;

Yi-Chun Lu, Taichung, TW;

Chun-Hsu Chen, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 27/12 (2013.01);
Abstract

A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.


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