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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12027367 B1

PDFFull Text
Date of Patent:
Jul. 02, 2024

Filed:

Oct. 25, 2021

Substrate treatment apparatus and manufacturing method of semiconductor device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masayuki Kitamura, Yokkaichi, JP;

Takayuki Beppu, Yokkaichi, JP;

Tomotaka Ariga, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/14 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/14 (2013.01); C23C 16/4408 (2013.01); C23C 16/4412 (2013.01); C23C 16/45534 (2013.01); H01L 21/28556 (2013.01); H01L 21/30604 (2013.01); H01L 21/67253 (2013.01);
Abstract

In a manufacturing method of a semiconductor device according to one embodiment, a first gas containing a first metal element is introduced into a chamber having a substrate housed therein. Next, the first gas is discharged from the chamber using a purge gas. Subsequently, a second gas reducing the first gas is introduced into the chamber. Next, the second gas is discharged from the chamber using the purge gas. Further, a third gas different from the first gas, the second gas, and the purge gas is introduced into the chamber at least either at a time of discharging the first gas or at a time of discharging the second gas.

Find Patent Forward Citations

Kitamura, Masayuki. (2024). Substrate treatment apparatus and manufacturing method of semiconductor device (U.S. Patent No. 12027367). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12027367

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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