The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Dec. 16, 2020
Applicant:

Mmi Semiconductor Co., Ltd., Tokyo, JP;

Inventors:

Takashi Kasai, Kyoto, JP;

Koji Momotani, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01F 1/688 (2006.01); G01F 1/692 (2006.01); G01F 1/69 (2006.01); G01P 5/10 (2006.01);
U.S. Cl.
CPC ...
G01F 1/6888 (2013.01); G01F 1/692 (2013.01);
Abstract

A thermal flow sensor chip has a heater part, and a pair of thermopiles provided so as to be opposite each other across the heater part. The heater part is famed by doping silicon with an impurity that reduces the electrical resistance. In each of the thermopiles: a silicon region is formed by doping silicon with an impurity that reduces the electrical resistance; the concentration of the impurity in a heater main part, including the lengthwise center of the heater part extending in the first direction, is lower than the concentration of the impurity in a heater outer peripheral part, the heater outer peripheral part being different from the heater main part and including a lengthwise end part of the heater part; and the concentration of the impurity in the heater main part is the same as the concentration of the impurity in at least part of the silicon region of the thermopile.


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