The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Oct. 29, 2021
Applicant:

Slt Technologies, Inc, Los Angeles, CA (US);

Inventors:

Mark P. D'Evelyn, Vancouver, WA (US);

Paul M. Von Dollen, Brush Prairie, WA (US);

Lisa M. Gay, Vancouver, WA (US);

Douglas W. Pocius, Aguanga, CA (US);

Jonathan D. Cook, Santa Barbara, CA (US);

Assignee:

SLT Technologies, Inc., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C30B 29/403 (2013.01);
Abstract

A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.


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