Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition

Abstract

Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., at less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and/or size of the deposited structures. For example, a deposited structure may be doped, alloyed, or surface treated during its formation using a combination of different precursors. In particular, a silicon structure may be prelithiated while being formed. Different working electrodes (e.g., with different surface sizes and properties) allow forming different types of structures, e.g., precipitating particles from the solution or specific types of films deposited on the working electrode. These processes require minimal energy and do not use volatile precursors. Furthermore, these processes produce a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up.