The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Apr. 27, 2021
Applicant:
Battelle Memorial Institute, Richland, WA (US);
Inventors:
Ran Yi, Richland, WA (US);
Ji-Guang Zhang, Richland, WA (US);
Assignee:
BATTELLE MEMORIAL INSTITUTE, Richland, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/023 (2006.01); C03C 15/00 (2006.01); C09K 13/08 (2006.01);
U.S. Cl.
CPC ...
C01B 33/023 (2013.01); C03C 15/00 (2013.01); C09K 13/08 (2013.01); C01P 2004/61 (2013.01);
Abstract
A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.