The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jan. 28, 2020
Applicant:

Ut-battelle, Llc, Oak Ridge, TN (US);

Inventors:

Prashant Bagri, Hillsboro, OR (US);

Sheng Dai, Knoxville, TN (US);

Huimin Luo, Knoxville, TN (US);

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/064 (2006.01); C01F 5/32 (2006.01);
U.S. Cl.
CPC ...
C01B 21/064 (2013.01); C01F 5/32 (2013.01); C01P 2002/02 (2013.01); C01P 2002/74 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01);
Abstract

A method for converting amorphous boron nitride to crystalline boron nitride, the method comprising immersing the amorphous boron nitride into anhydrous molten magnesium chloride maintained within a temperature range of 720° C.-820° C. while the amorphous boron nitride is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous boron nitride to the crystalline form. Also described herein is a method for converting an amorphous carbon material to a crystalline carbon material, the method comprising immersing said amorphous carbon material into anhydrous molten magnesium chloride maintained within a temperature range of 780° C.-820° C. while the amorphous carbon material is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous carbon material to the crystalline form.


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