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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12022690 B1

PDFFull Text
Date of Patent:
Jun. 25, 2024

Filed:

Apr. 29, 2021

Method of manufacturing semiconductor element that includes wet etching semiconductor layer that includes crystallized two-dimensional layers

Applicants:

Samsung Display Co., Ltd., Yongin-Si, KR;

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Jun Hyung Lim, Seoul, KR;

Hyungjun Kim, Seoul, KR;

Hyungjun Kim, Seoul, KR;

Young Jun Kim, Seoul, KR;

Ju Sang Park, Seoul, KR;

Whang Je Woo, Seoul, KR;

Assignees:

Samsung Display Co., Ltd., Yongin-si, KR;

Industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H10K 59/121 (2023.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 71/00 (2023.02); H01L 21/02568 (2013.01); H01L 21/0262 (2013.01); H01L 27/1225 (2013.01); H01L 27/127 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7606 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02);
Abstract

A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.

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