The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 07, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Hyun Ho Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02);
Abstract

A semiconductor device and a method of manufacturing same may include a stack including alternately stacked conductive layers and insulating layers, a separation insulating structure passing through the stack, and including a line pattern, first protrusion patterns protruded from the line pattern to one side, and second protrusion patterns protruded from the line pattern to another side, first channel structures passing through the stack at the one side of the separation insulating structure and surrounding the first protrusion patterns, respectively, and second channel structures passing through the stack at the another side of the separation insulating structure and surrounding the second protrusion patterns, respectively.


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