The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Apr. 14, 2023
Applicant:

Logitech Europe S.a., Lausanne, CH;

Inventors:

Aron Michael Rosenberg, Lafayette, CA (US);

Darrell Hayes, Westlake Village, CA (US);

Matthew Fumio Yamamoto, Moorpark, CA (US);

Tyler Copeland Barkley, Oak Park, CA (US);

Assignee:

Logitech Europe S.A., Lausanne, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 1/04 (2006.01); H03F 3/185 (2006.01); H04R 1/28 (2006.01); H04R 3/04 (2006.01); H04R 7/04 (2006.01); H04R 9/08 (2006.01);
U.S. Cl.
CPC ...
H03F 3/1855 (2013.01); H04R 1/04 (2013.01); H04R 1/2807 (2013.01); H04R 3/04 (2013.01); H04R 7/04 (2013.01); H04R 9/08 (2013.01); H03F 2200/03 (2013.01);
Abstract

A microphone system includes a microphone and a pre-amplification conditioning circuit configured within a housing and comprising a pair of matched JFETs configured in a differential pair with common-source configuration and, when biased, are operable to receive and amplify the differential microphone output signal. The microphone further includes a pair of BJTs configured as a complimentary feedback transistor pair with each of the pair of BJTs coupled in parallel to a corresponding one of the pair of matched JFETs, and a current sink coupled to the matched JFETs and corresponding emitter electrodes of the BJTs and operable to maintain a fixed total direct current through each of the matched JFETs and BJTs, which reduces the JFETs corresponding electrical load, reduces signal noise, and increases a maximum amplified microphone output signal level at the drains of the matched JFETs.


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