The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Nov. 07, 2019
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Harald König, Bernhardswald, DE;
Bernhard Stojetz, Wiesent, DE;
Alfred Lell, Maxhütte-Haidhof, DE;
Muhammad Ali, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current Ifed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop Uoccurs at the section and at least part of said operating current Iflows through the assigned current regulating element and experiences an electrical resistance Rin the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature Thas a positive temperature coefficient dR/dT|. Alternatively or additionally, the resistance Ris greater than |ΔU/I, wherein ΔUis the change in the voltage drop Uat the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature Tby 1 K.