The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Nov. 12, 2019
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Jan Wagner, Regensburg, DE;
Werner Bergbauer, Windberg, DE;
Christoph Eichler, Donaustauf, DE;
Alfred Lell, Maxhütte-Haidhof, DE;
Georg Brüderl, Burglengenfeld, DE;
Matthias Peter, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlInGaN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.