The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 20, 2022
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventor:

Yaojian Leng, Vancouver, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 28/92 (2013.01); H10B 12/038 (2023.02); H10B 12/0387 (2023.02); H10B 12/37 (2023.02); H01L 28/75 (2013.01);
Abstract

A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator cup, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base, and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator cup is formed in an opening defined by the bottom electrode cup, and includes a laterally-extending insulator cup base formed over the laterally-extending bottom electrode cup base, and an insulator cup sidewall extending upwardly from the laterally-extending insulator cup base. A dielectric sidewall spacer is located between the insulator cup sidewall and the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup.


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