The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Nov. 25, 2020
Applicant:

Excellence Optoelectronics Inc., Miaoli County, TW;

Inventors:

Kuo-Hsin Huang, Miaoli County, TW;

Tsung-Hsiang Chen, Miaoli County, TW;

Tsung-Ting Hua, Miaoli County, TW;

Tzeng-Guang Tsai, Miaoli County, TW;

Yung-Hsiang Chao, Miaoli County, TW;

Hao-Chung Kuo, Zhubei, TW;

Sung-Wen Huang Chen, Nantou County, TW;

Fang-Jyun Liou, Taipei, TW;

An-Chen Liu, Taichung, TW;

Assignee:

EXCELLENCE OPTOELECTRONICS INC., Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/06 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/505 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A three-in-one RGB mini-LED device includes a substrate, a second electrical semiconductor layer, a plurality of multiple-quantum well layers, a plurality of first electrical semiconductor layers, and a plurality of mirrors. The second electrical semiconductor layer is disposed on the substrate. The plurality of multiple-quantum well layers are disposed on the second electrical semiconductor layer. An area of each of the plurality of multiple-quantum well layers is smaller than an area of the second electrical semiconductor layer, and a region on the second semiconductor layer is not covered by the plurality of multiple-quantum well layers.


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