The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Apr. 19, 2023
Applicant:

Innolux Corporation, Jhu-Nan, TW;

Inventors:

Cheng-Hsiung Chen, Jhu-Nan, TW;

Pei-Chieh Chen, Jhu-Nan, TW;

Chao-Hsiang Wang, Jhu-Nan, TW;

Yi-Ching Chen, Jhu-Nan, TW;

Assignee:

INNOLUX CORPORATION, Jhu-Nan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); G02F 1/136227 (2013.01);
Abstract

A thin film transistor substrate includes a substrate, a first conductive element and a semiconductor. The first conductive element is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The semiconductor is disposed on the substrate. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. In a top view, a virtual extending line disposes between the trace portion and the protrusive portion, the virtual extending line overlaps the second edge. At least a part of the semiconductor extends beyond the virtual extending line along a second direction vertical to the first direction.


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