The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Nov. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Euibok Lee, Seoul, KR;

Wandon Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01);
Abstract

An integrated circuit (IC) device includes a first conductive line in a closed curve defining a local area on a substrate. The first conductive line has a first end portion and a second end portion. A second conductive line is outside the local area. The second conductive line has a linear line portion along the closed curve and a bulging end portion along the closed curve. The bulging end portion protrudes from the linear line portion toward the first end portion of the first conductive line in the second lateral direction and protrudes further than the first end portion to the outside of the local area. A method of manufacturing an IC device includes forming a first reference pattern having a mandrel hole. A reference spacer is formed inside the mandrel hole. A second reference pattern is formed. The second reference pattern has a shift hole.


Find Patent Forward Citations

Loading…